Product - Indium Antimonide (InSb) Wafers

5N Plus produces indium antimonide (InSb) wafers for high-sensitvity infrared detectors and focal plane arrays, such as those used in high-end thermal imaging cameras. Wafer products are manufactured to the exact specifications of our customers with the following options/features:
Crystal Quality
Etch Pit Density <10/cm 2
Electrical Characteristics
Target carrier concentration Per customer spec
Min. carrier concentration at 77 K 4x1014/cm-3
Minimum mobility at 77 K 2x105 cm2
Uniformity on a single wafer < 10%
Wafer Orientation
Standard (111)
Off-Axis Available Per customer spec
Tolerance +/- 0.5
Flat orientation Per customer spec
Wafer Diameter and Thickness
Diameter Standard Thickness (±50 μm) TTV
76 mm 900 μm < 15 μm
85 mm 900 μm < 15 μm
100 mm 900 μm < 10 μm
125 mm 900 μm < 10 μm
Custom thickness available, e.g. 400 μm – 1000 μm.
Warp < 10 μm
Bow < 10 μm, > -10 μm
Surface Finish
Polarity A-face or B-face epi-ready (per customer spec)
Front side Polished, epi-ready
Back side Polished
Wafer packaging
Packaged in individual wafer carriers and sealed in a moisture resistant/anti static bag under inert gas.
Contact us with special request. Our technical team will work with you to provide a solution for your application.
Click here for PDF version of InSb Wafer Flyer.pdf

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